[12253PC Stock]
- Nimewo Pati:
- STW11NB80
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 800V 11A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Tiristors - SCR, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STW11NB80 electronic components. STW11NB80 can be shipped within 24 hours after order. If you have any demands for STW11NB80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW11NB80 Atribi pwodwi yo
Nimewo Pati :
STW11NB80
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 800V 11A TO-247
Seri :
PowerMESH™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
800 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
190W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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