ON Semiconductor - NTMS5P02R2SG

KEY Part #: K6406944

[1144PC Stock]


    Nimewo Pati:
    NTMS5P02R2SG
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 20V 3.95A 8-SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Modil pouvwa chofè and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTMS5P02R2SG electronic components. NTMS5P02R2SG can be shipped within 24 hours after order. If you have any demands for NTMS5P02R2SG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTMS5P02R2SG Atribi pwodwi yo

    Nimewo Pati : NTMS5P02R2SG
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 20V 3.95A 8-SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.95A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 33 mOhm @ 5.4A, 4.5V
    Vgs (th) (Max) @ Id : 1.25V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 4.5V
    Vgs (Max) : ±10V
    Antre kapasite (Ciss) (Max) @ Vds : 1900pF @ 16V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 790mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-SOIC
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)