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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. MMSF7P03HDR2G

ON Semiconductor - MMSF7P03HDR2G

KEY Part #: K6409255

[345PC Stock]

    Nimewo Pati:
    MMSF7P03HDR2G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 30V 7A 8-SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor MMSF7P03HDR2G electronic components. MMSF7P03HDR2G can be shipped within 24 hours after order. If you have any demands for MMSF7P03HDR2G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MMSF7P03HDR2G Atribi pwodwi yo

    Nimewo Pati : MMSF7P03HDR2G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 30V 7A 8-SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 35 mOhm @ 5.3A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 75.8nC @ 6V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 24V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.5W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-SOIC
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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