BSB015N04NX3GXUMA1 Pricing (USD) [61160PC Stock]
- 1 pcs$0.63931
- Nimewo Pati:
- BSB015N04NX3GXUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 40V 180A 2WDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSB015N04NX3GXUMA1 electronic components. BSB015N04NX3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB015N04NX3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB015N04NX3GXUMA1 Atribi pwodwi yo
Nimewo Pati :
BSB015N04NX3GXUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 40V 180A 2WDSON
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Ta), 180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
142nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
12000pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 89W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
MG-WDSON-2, CanPAK M™
Pake / Ka :
3-WDSON
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