Infineon Technologies - IRFZ34NSTRRPBF

KEY Part #: K6419834

IRFZ34NSTRRPBF Pricing (USD) [136577PC Stock]

  • 1 pcs$0.27082
  • 800 pcs$0.25999

Nimewo Pati:
IRFZ34NSTRRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 55V 29A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFZ34NSTRRPBF electronic components. IRFZ34NSTRRPBF can be shipped within 24 hours after order. If you have any demands for IRFZ34NSTRRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFZ34NSTRRPBF Atribi pwodwi yo

Nimewo Pati : IRFZ34NSTRRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 55V 29A D2PAK
Seri : HEXFET®
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 29A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 40 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 68W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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