Nexperia USA Inc. - PSMN8R9-100BSEJ

KEY Part #: K6400777

[8848PC Stock]


    Nimewo Pati:
    PSMN8R9-100BSEJ
    Manifakti:
    Nexperia USA Inc.
    Detaye deskripsyon:
    PSMN8R9-100BSE/SOT404/D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Diodes - RF and Transistors - Bipolè (BJT) - Arrays ...
    Avantaj konpetitif:
    We specialize in Nexperia USA Inc. PSMN8R9-100BSEJ electronic components. PSMN8R9-100BSEJ can be shipped within 24 hours after order. If you have any demands for PSMN8R9-100BSEJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PSMN8R9-100BSEJ Atribi pwodwi yo

    Nimewo Pati : PSMN8R9-100BSEJ
    Manifakti : Nexperia USA Inc.
    Deskripsyon : PSMN8R9-100BSE/SOT404/D2PAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 108A
    Drive Voltage (Max Rds Sou, Min RDS Sou) : -
    RD sou (Max) @ Id, Vgs : -
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : 128nC @ 10V
    Vgs (Max) : -
    Antre kapasite (Ciss) (Max) @ Vds : 7.11nF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 296W
    Operating Tanperati : 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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