[8848PC Stock]
- Nimewo Pati:
- PSMN8R9-100BSEJ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- PSMN8R9-100BSE/SOT404/D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Modil pouvwa chofè, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN8R9-100BSEJ electronic components. PSMN8R9-100BSEJ can be shipped within 24 hours after order. If you have any demands for PSMN8R9-100BSEJ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN8R9-100BSEJ Atribi pwodwi yo
Nimewo Pati :
PSMN8R9-100BSEJ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
PSMN8R9-100BSE/SOT404/D2PAK
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
108A
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
128nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
7.11nF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
296W
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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