Diodes Incorporated - DMN3035LWN-7

KEY Part #: K6523072

DMN3035LWN-7 Pricing (USD) [460537PC Stock]

  • 1 pcs$0.08031
  • 3,000 pcs$0.07188

Nimewo Pati:
DMN3035LWN-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 30V 5.5A 8VDFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3035LWN-7 electronic components. DMN3035LWN-7 can be shipped within 24 hours after order. If you have any demands for DMN3035LWN-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3035LWN-7 Atribi pwodwi yo

Nimewo Pati : DMN3035LWN-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 30V 5.5A 8VDFN
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A
RD sou (Max) @ Id, Vgs : 35 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 9.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 399pF @ 15V
Pouvwa - Max : 770mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerVDFN
Pake Aparèy Founisè : V-DFN3020-8

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