STQ1NK80ZR-AP Pricing (USD) [277206PC Stock]
- 1 pcs$0.13343
- 2,000 pcs$0.11923
- Nimewo Pati:
- STQ1NK80ZR-AP
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 800V 0.3A TO-92.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STQ1NK80ZR-AP electronic components. STQ1NK80ZR-AP can be shipped within 24 hours after order. If you have any demands for STQ1NK80ZR-AP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STQ1NK80ZR-AP Atribi pwodwi yo
Nimewo Pati :
STQ1NK80ZR-AP
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 800V 0.3A TO-92
Seri :
SuperMESH™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
16 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
7.7nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
160pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-92-3
Pake / Ka :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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