IXKC23N60C5 Pricing (USD) [13497PC Stock]
- 1 pcs$3.52923
- 50 pcs$3.51167
- Nimewo Pati:
- IXKC23N60C5
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 23A ISOPLUS220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXKC23N60C5 electronic components. IXKC23N60C5 can be shipped within 24 hours after order. If you have any demands for IXKC23N60C5, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXKC23N60C5 Atribi pwodwi yo
Nimewo Pati :
IXKC23N60C5
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 23A ISOPLUS220
Seri :
CoolMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 100V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS220™
Pake / Ka :
ISOPLUS220™
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