IXTH06N220P3HV Pricing (USD) [6017PC Stock]
- 1 pcs$6.84848
- Nimewo Pati:
- IXTH06N220P3HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Transistors - JFETs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH06N220P3HV electronic components. IXTH06N220P3HV can be shipped within 24 hours after order. If you have any demands for IXTH06N220P3HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH06N220P3HV Atribi pwodwi yo
Nimewo Pati :
IXTH06N220P3HV
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
2200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
600mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
80 Ohm @ 300mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247HV
Pake / Ka :
TO-247-3 Variant
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