IRF7759L2TRPBF Pricing (USD) [34949PC Stock]
- 1 pcs$1.18513
- 4,000 pcs$1.17924
- Nimewo Pati:
- IRF7759L2TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 75V DIRECTFET L8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - Bridge rèktifikateur and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7759L2TRPBF electronic components. IRF7759L2TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7759L2TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7759L2TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF7759L2TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 75V DIRECTFET L8
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
26A (Ta), 375A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.3 mOhm @ 96A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
300nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
12222pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.3W (Ta), 125W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET L8
Pake / Ka :
DirectFET™ Isometric L8
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