IPAW60R190CEXKSA1 Pricing (USD) [40484PC Stock]
- 1 pcs$0.96581
- 450 pcs$0.54251
- Nimewo Pati:
- IPAW60R190CEXKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 600V TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Diodes - RF and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPAW60R190CEXKSA1 electronic components. IPAW60R190CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAW60R190CEXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAW60R190CEXKSA1 Atribi pwodwi yo
Nimewo Pati :
IPAW60R190CEXKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 600V TO220-3
Seri :
CoolMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
26.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
190 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 630µA
Chaje Gate (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1400pF @ 100V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
34W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220 Full Pack
Pake / Ka :
TO-220-3 Full Pack
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