Infineon Technologies - IRLS3813PBF

KEY Part #: K6402724

IRLS3813PBF Pricing (USD) [2605PC Stock]

  • 1,000 pcs$0.57811

Nimewo Pati:
IRLS3813PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 30V 160A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRLS3813PBF electronic components. IRLS3813PBF can be shipped within 24 hours after order. If you have any demands for IRLS3813PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLS3813PBF Atribi pwodwi yo

Nimewo Pati : IRLS3813PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 160A D2PAK
Seri : HEXFET®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.95 mOhm @ 148A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs : 83nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8020pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 195W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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