PHT6NQ10T,135 Pricing (USD) [281605PC Stock]
- 1 pcs$0.17708
- 4,000 pcs$0.17620
- Nimewo Pati:
- PHT6NQ10T,135
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 100V 3A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHT6NQ10T,135 electronic components. PHT6NQ10T,135 can be shipped within 24 hours after order. If you have any demands for PHT6NQ10T,135, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHT6NQ10T,135 Atribi pwodwi yo
Nimewo Pati :
PHT6NQ10T,135
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 100V 3A SOT223
Seri :
TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
90 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
633pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta), 8.3W (Tc)
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-73
Pake / Ka :
TO-261-4, TO-261AA
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