Nimewo Pati :
APTM10DHM09TG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 100V 139A SP4
FET Kalite :
2 N-Channel (Dual) Asymmetrical
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
139A
RD sou (Max) @ Id, Vgs :
10 mOhm @ 69.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
350nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
9875pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP4