FDD7N25LZTM Pricing (USD) [200440PC Stock]
- 1 pcs$0.18453
- 2,500 pcs$0.17651
- Nimewo Pati:
- FDD7N25LZTM
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 250V 6.2A DPAK-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Diodes - Rèkteur - Single, Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDD7N25LZTM electronic components. FDD7N25LZTM can be shipped within 24 hours after order. If you have any demands for FDD7N25LZTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD7N25LZTM Atribi pwodwi yo
Nimewo Pati :
FDD7N25LZTM
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 250V 6.2A DPAK-3
Seri :
UniFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
550 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
635pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
56W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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