[3515PC Stock]
- Nimewo Pati:
- PH3430AL,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 100A LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PH3430AL,115 electronic components. PH3430AL,115 can be shipped within 24 hours after order. If you have any demands for PH3430AL,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PH3430AL,115 Atribi pwodwi yo
Nimewo Pati :
PH3430AL,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 30V 100A LFPAK
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
3.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.15V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
2458pF @ 12V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK56, Power-SO8
Pake / Ka :
SC-100, SOT-669
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