Infineon Technologies - SPD07N60S5T

KEY Part #: K6410173

[28PC Stock]


    Nimewo Pati:
    SPD07N60S5T
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 600V 7.3A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Modil pouvwa chofè and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies SPD07N60S5T electronic components. SPD07N60S5T can be shipped within 24 hours after order. If you have any demands for SPD07N60S5T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPD07N60S5T Atribi pwodwi yo

    Nimewo Pati : SPD07N60S5T
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 600V 7.3A DPAK
    Seri : CoolMOS™
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.3A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 600 mOhm @ 4.6A, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 350µA
    Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 970pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 83W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-TO252-3
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63