Diodes Incorporated - DMN21D2UFB-7B

KEY Part #: K6416496

DMN21D2UFB-7B Pricing (USD) [1089357PC Stock]

  • 1 pcs$0.03395
  • 10,000 pcs$0.03049

Nimewo Pati:
DMN21D2UFB-7B
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 20V 0.76A 3DFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN21D2UFB-7B Atribi pwodwi yo

Nimewo Pati : DMN21D2UFB-7B
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 20V 0.76A 3DFN
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 760mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 990 mOhm @ 100mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.93nC @ 10V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 27.6pF @ 16V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 380mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 3-DFN1006 (1.0x0.6)
Pake / Ka : 3-UFDFN