CSD19538Q2 Pricing (USD) [342569PC Stock]
- 1 pcs$0.10797
- 3,000 pcs$0.10077
- Nimewo Pati:
- CSD19538Q2
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET NCH 100V 14.4A SON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD19538Q2 electronic components. CSD19538Q2 can be shipped within 24 hours after order. If you have any demands for CSD19538Q2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19538Q2 Atribi pwodwi yo
Nimewo Pati :
CSD19538Q2
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET NCH 100V 14.4A SON
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
14.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
59 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
454pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 20.2W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WSON (2x2)
Pake / Ka :
6-WDFN Exposed Pad
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