IRF730STRRPBF Pricing (USD) [69971PC Stock]
- 1 pcs$0.56160
- 800 pcs$0.55880
- Nimewo Pati:
- IRF730STRRPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 400V 5.5A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRF730STRRPBF electronic components. IRF730STRRPBF can be shipped within 24 hours after order. If you have any demands for IRF730STRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF730STRRPBF Atribi pwodwi yo
Nimewo Pati :
IRF730STRRPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 400V 5.5A D2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
400V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1 Ohm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
700pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 74W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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