TSM1NB60CW RPG Pricing (USD) [494141PC Stock]
- 1 pcs$0.07485
- Nimewo Pati:
- TSM1NB60CW RPG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CHANNEL 600V 1A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM1NB60CW RPG electronic components. TSM1NB60CW RPG can be shipped within 24 hours after order. If you have any demands for TSM1NB60CW RPG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM1NB60CW RPG Atribi pwodwi yo
Nimewo Pati :
TSM1NB60CW RPG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CHANNEL 600V 1A SOT223
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
10 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.1nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
138pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
39W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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