NXP USA Inc. - 2N7002PM,315

KEY Part #: K6400083

[3520PC Stock]


    Nimewo Pati:
    2N7002PM,315
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 60V 0.3A SOT-883.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays and Modil pouvwa chofè ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. 2N7002PM,315 electronic components. 2N7002PM,315 can be shipped within 24 hours after order. If you have any demands for 2N7002PM,315, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2N7002PM,315 Atribi pwodwi yo

    Nimewo Pati : 2N7002PM,315
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 60V 0.3A SOT-883
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 300mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
    RD sou (Max) @ Id, Vgs : -
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 250mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : DFN1006-3
    Pake / Ka : SC-101, SOT-883