Diodes Incorporated - DMN1016UCB6-7

KEY Part #: K6393427

DMN1016UCB6-7 Pricing (USD) [350660PC Stock]

  • 1 pcs$0.10548
  • 3,000 pcs$0.09441

Nimewo Pati:
DMN1016UCB6-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 12V 5.5A U-WLB1510-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN1016UCB6-7 Atribi pwodwi yo

Nimewo Pati : DMN1016UCB6-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 12V 5.5A U-WLB1510-6
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 20 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.2nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 423pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 920mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : U-WLB1510-6
Pake / Ka : 6-UFBGA, WLBGA