Nimewo Pati :
DMN1016UCB6-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 12V 5.5A U-WLB1510-6
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
423pF @ 6V
Disipasyon Pouvwa (Max) :
920mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
U-WLB1510-6
Pake / Ka :
6-UFBGA, WLBGA