IXYS - IXTT140P10T

KEY Part #: K6394901

IXTT140P10T Pricing (USD) [8023PC Stock]

  • 1 pcs$5.67824
  • 60 pcs$5.64999

Nimewo Pati:
IXTT140P10T
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET P-CH 100V 140A TO-268.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in IXYS IXTT140P10T electronic components. IXTT140P10T can be shipped within 24 hours after order. If you have any demands for IXTT140P10T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTT140P10T Atribi pwodwi yo

Nimewo Pati : IXTT140P10T
Manifakti : IXYS
Deskripsyon : MOSFET P-CH 100V 140A TO-268
Seri : TrenchP™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 140A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 400nC @ 10V
Vgs (Max) : ±15V
Antre kapasite (Ciss) (Max) @ Vds : 31400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 568W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA