STW19NM60N Pricing (USD) [30568PC Stock]
- 1 pcs$1.86857
- 10 pcs$1.66629
- 100 pcs$1.36643
- 500 pcs$1.04975
- 1,000 pcs$0.88533
- Nimewo Pati:
- STW19NM60N
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 600V 13A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STW19NM60N electronic components. STW19NM60N can be shipped within 24 hours after order. If you have any demands for STW19NM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW19NM60N Atribi pwodwi yo
Nimewo Pati :
STW19NM60N
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 600V 13A TO-247
Seri :
Automotive, AEC-Q101, MDmesh™ II
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
285 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
1000pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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