[4147PC Stock]
- Nimewo Pati:
- BSO330N02KGFUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 5.4A 8DSO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Tiristors - TRIACs and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSO330N02KGFUMA1 electronic components. BSO330N02KGFUMA1 can be shipped within 24 hours after order. If you have any demands for BSO330N02KGFUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO330N02KGFUMA1 Atribi pwodwi yo
Nimewo Pati :
BSO330N02KGFUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 20V 5.4A 8DSO
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.4A
RD sou (Max) @ Id, Vgs :
30 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs :
4.9nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
730pF @ 10V
Pouvwa - Max :
1.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
PG-DSO-8
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