Toshiba Semiconductor and Storage - 2SK2847(F)

KEY Part #: K6408554

[8578PC Stock]


    Nimewo Pati:
    2SK2847(F)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET N-CH 900V 8A TO-3PN.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage 2SK2847(F) electronic components. 2SK2847(F) can be shipped within 24 hours after order. If you have any demands for 2SK2847(F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SK2847(F) Atribi pwodwi yo

    Nimewo Pati : 2SK2847(F)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET N-CH 900V 8A TO-3PN
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 900V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 4A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 58nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 2040pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 85W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-3P(N)IS
    Pake / Ka : TO-3P-3, SC-65-3

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