TPH3208LSG Pricing (USD) [8238PC Stock]
- 1 pcs$5.00194
- Nimewo Pati:
- TPH3208LSG
- Manifakti:
- Transphorm
- Detaye deskripsyon:
- GANFET N-CH 650V 20A 3PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Transphorm TPH3208LSG electronic components. TPH3208LSG can be shipped within 24 hours after order. If you have any demands for TPH3208LSG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3208LSG Atribi pwodwi yo
Nimewo Pati :
TPH3208LSG
Manifakti :
Transphorm
Deskripsyon :
GANFET N-CH 650V 20A 3PQFN
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
130 mOhm @ 14A, 8V
Vgs (th) (Max) @ Id :
2.6V @ 300µA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 8V
Vgs (Max) :
±18V
Antre kapasite (Ciss) (Max) @ Vds :
760pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
96W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-PQFN (8x8)
Pake / Ka :
3-PowerDFN
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