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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQT3P20TF

ON Semiconductor - FQT3P20TF

KEY Part #: K6418413

FQT3P20TF Pricing (USD) [344906PC Stock]

  • 1 pcs$0.10724
  • 4,000 pcs$0.09980
Nimewo Pati:
FQT3P20TF
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 200V 0.67A SOT-223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQT3P20TF electronic components. FQT3P20TF can be shipped within 24 hours after order. If you have any demands for FQT3P20TF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQT3P20TF Atribi pwodwi yo

Nimewo Pati : FQT3P20TF
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 200V 0.67A SOT-223
Seri : QFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 670mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.7 Ohm @ 335mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 250pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223-4
Pake / Ka : TO-261-4, TO-261AA

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