[319PC Stock]
- Nimewo Pati:
- IPB085N06L G
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 60V 80A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Diodes - RF and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB085N06L G electronic components. IPB085N06L G can be shipped within 24 hours after order. If you have any demands for IPB085N06L G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB085N06L G Atribi pwodwi yo
Nimewo Pati :
IPB085N06L G
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 80A TO-263
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
8.2 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2V @ 125µA
Chaje Gate (Qg) (Max) @ Vgs :
104nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3500pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
188W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-3-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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