Nimewo Pati :
DMG4812SSS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 30V 8A 8-SO
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
15 mOhm @ 10.7A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1849pF @ 15V
Karakteristik FET :
Schottky Diode (Body)
Disipasyon Pouvwa (Max) :
1.54W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)