[8606PC Stock]
- Nimewo Pati:
- IXKP10N60C5M
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 5.4A TO220ABFP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - SCR, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Diodes - Zener - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXKP10N60C5M electronic components. IXKP10N60C5M can be shipped within 24 hours after order. If you have any demands for IXKP10N60C5M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXKP10N60C5M Atribi pwodwi yo
Nimewo Pati :
IXKP10N60C5M
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 5.4A TO220ABFP
Seri :
CoolMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
385 mOhm @ 5.2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 340µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
790pF @ 100V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220ABFP
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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