STMicroelectronics - STP25N10F7

KEY Part #: K6398477

STP25N10F7 Pricing (USD) [45397PC Stock]

  • 1 pcs$0.86129
  • 10 pcs$0.77892
  • 100 pcs$0.62606
  • 500 pcs$0.48693
  • 1,000 pcs$0.40346

Nimewo Pati:
STP25N10F7
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 100V 25A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STP25N10F7 electronic components. STP25N10F7 can be shipped within 24 hours after order. If you have any demands for STP25N10F7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STP25N10F7 Atribi pwodwi yo

Nimewo Pati : STP25N10F7
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 100V 25A TO-220
Seri : DeepGATE™, STripFET™ VII
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 35 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 920pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 50W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3

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