Vishay Siliconix - SUD25N04-25-E3

KEY Part #: K6405934

[1493PC Stock]


    Nimewo Pati:
    SUD25N04-25-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 40V 25A TO252.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SUD25N04-25-E3 electronic components. SUD25N04-25-E3 can be shipped within 24 hours after order. If you have any demands for SUD25N04-25-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SUD25N04-25-E3 Atribi pwodwi yo

    Nimewo Pati : SUD25N04-25-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 40V 25A TO252
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 40V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 25 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 510pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3W (Ta), 33W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TO-252, (D-Pak)
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63