Toshiba Semiconductor and Storage - T2N7002BK,LM

KEY Part #: K6418860

T2N7002BK,LM Pricing (USD) [3334097PC Stock]

  • 1 pcs$0.01227
  • 3,000 pcs$0.01221

Nimewo Pati:
T2N7002BK,LM
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 60V 0.4A SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage T2N7002BK,LM electronic components. T2N7002BK,LM can be shipped within 24 hours after order. If you have any demands for T2N7002BK,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

T2N7002BK,LM Atribi pwodwi yo

Nimewo Pati : T2N7002BK,LM
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 60V 0.4A SOT23
Seri : U-MOSVII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 400mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 40pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 320mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3