SI7501DN-T1-GE3 Pricing (USD) [3907PC Stock]
- 1 pcs$0.53517
- 10 pcs$0.47413
- 100 pcs$0.37487
- 500 pcs$0.27500
- 1,000 pcs$0.21711
- Nimewo Pati:
- SI7501DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 30V 5.4A 1212-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single, Tiristors - SCR - Modil yo and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI7501DN-T1-GE3 electronic components. SI7501DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7501DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7501DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI7501DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 30V 5.4A 1212-8
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel, Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.4A, 4.5A
RD sou (Max) @ Id, Vgs :
35 mOhm @ 7.7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.6W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® 1212-8 Dual
Pake Aparèy Founisè :
PowerPAK® 1212-8 Dual
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