[4146PC Stock]
- Nimewo Pati:
- SSM6N42FE(TE85L,F)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 0.8A ES6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM6N42FE(TE85L,F) electronic components. SSM6N42FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for SSM6N42FE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N42FE(TE85L,F) Atribi pwodwi yo
Nimewo Pati :
SSM6N42FE(TE85L,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 20V 0.8A ES6
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA
RD sou (Max) @ Id, Vgs :
240 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
90pF @ 10V
Pouvwa - Max :
150mW
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
ES6 (1.6x1.6)
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