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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. JANTX2N6796

Microsemi Corporation - JANTX2N6796

KEY Part #: K6403729

[8745PC Stock]

    Nimewo Pati:
    JANTX2N6796
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET N-CH 100V 8A.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Tiristors - SCR, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation JANTX2N6796 electronic components. JANTX2N6796 can be shipped within 24 hours after order. If you have any demands for JANTX2N6796, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    JANTX2N6796 Atribi pwodwi yo

    Nimewo Pati : JANTX2N6796
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET N-CH 100V 8A
    Seri : Military, MIL-PRF-19500/557
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 195 mOhm @ 8A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 28.51nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 800mW (Ta), 25W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-205AF (TO-39)
    Pake / Ka : TO-205AD, TO-39-3 Metal Can

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