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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCPF7N60YDTU

ON Semiconductor - FCPF7N60YDTU

KEY Part #: K6419031

FCPF7N60YDTU Pricing (USD) [88328PC Stock]

  • 1 pcs$0.44268
  • 800 pcs$0.41659
Nimewo Pati:
FCPF7N60YDTU
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V 7A TO-220F.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - JFETs, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCPF7N60YDTU electronic components. FCPF7N60YDTU can be shipped within 24 hours after order. If you have any demands for FCPF7N60YDTU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCPF7N60YDTU Atribi pwodwi yo

Nimewo Pati : FCPF7N60YDTU
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 600V 7A TO-220F
Seri : SuperFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 600 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 920pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 31W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220F-3 (Y-Forming)
Pake / Ka : TO-220-3 Full Pack, Formed Leads

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