Nexperia USA Inc. - PSMN6R0-25YLB,115

KEY Part #: K6400717

PSMN6R0-25YLB,115 Pricing (USD) [332732PC Stock]

  • 1 pcs$0.11116
  • 1,500 pcs$0.10783

Nimewo Pati:
PSMN6R0-25YLB,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 25V LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN6R0-25YLB,115 electronic components. PSMN6R0-25YLB,115 can be shipped within 24 hours after order. If you have any demands for PSMN6R0-25YLB,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN6R0-25YLB,115 Atribi pwodwi yo

Nimewo Pati : PSMN6R0-25YLB,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 25V LFPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 73A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 6.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 1.95V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 19.3nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1099pF @ 12V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 58W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK56, Power-SO8
Pake / Ka : SC-100, SOT-669

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