BSC011N03LSATMA1 Pricing (USD) [119108PC Stock]
- 1 pcs$0.31054
- Nimewo Pati:
- BSC011N03LSATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 100A 8TDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSC011N03LSATMA1 electronic components. BSC011N03LSATMA1 can be shipped within 24 hours after order. If you have any demands for BSC011N03LSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC011N03LSATMA1 Atribi pwodwi yo
Nimewo Pati :
BSC011N03LSATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 100A 8TDSON
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
37A (Ta), 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.1 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4700pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 96W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8
Pake / Ka :
8-PowerTDFN
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