IXYS - IXFK21N100Q

KEY Part #: K6393623

IXFK21N100Q Pricing (USD) [5120PC Stock]

  • 1 pcs$9.35219
  • 25 pcs$9.30566

Nimewo Pati:
IXFK21N100Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 21A TO-264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in IXYS IXFK21N100Q electronic components. IXFK21N100Q can be shipped within 24 hours after order. If you have any demands for IXFK21N100Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK21N100Q Atribi pwodwi yo

Nimewo Pati : IXFK21N100Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 21A TO-264
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264AA (IXFK)
Pake / Ka : TO-264-3, TO-264AA