BSG0810NDIATMA1 Pricing (USD) [83416PC Stock]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Nimewo Pati:
- BSG0810NDIATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Atribi pwodwi yo
Nimewo Pati :
BSG0810NDIATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 25V 19A/39A 8TISON
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Asymmetrical
Karakteristik FET :
Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A, 39A
RD sou (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1040pF @ 12V
Pouvwa - Max :
2.5W
Operating Tanperati :
-55°C ~ 155°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerTDFN
Pake Aparèy Founisè :
PG-TISON-8
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