Infineon Technologies - BSD235N L6327

KEY Part #: K6524155

[4651PC Stock]


    Nimewo Pati:
    BSD235N L6327
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET 2N-CH 20V 0.95A SOT363.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSD235N L6327 electronic components. BSD235N L6327 can be shipped within 24 hours after order. If you have any demands for BSD235N L6327, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSD235N L6327 Atribi pwodwi yo

    Nimewo Pati : BSD235N L6327
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET 2N-CH 20V 0.95A SOT363
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 950mA
    RD sou (Max) @ Id, Vgs : 350 mOhm @ 950mA, 4.5V
    Vgs (th) (Max) @ Id : 1.2V @ 1.6µA
    Chaje Gate (Qg) (Max) @ Vgs : 0.32nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 63pF @ 10V
    Pouvwa - Max : 500mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-VSSOP, SC-88, SOT-363
    Pake Aparèy Founisè : PG-SOT363-6

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