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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. ECH8315-TL-H

ON Semiconductor - ECH8315-TL-H

KEY Part #: K6392924

ECH8315-TL-H Pricing (USD) [331259PC Stock]

  • 1 pcs$0.11222
  • 3,000 pcs$0.11166
Nimewo Pati:
ECH8315-TL-H
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 30V 7.5A ECH8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - RF and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in ON Semiconductor ECH8315-TL-H electronic components. ECH8315-TL-H can be shipped within 24 hours after order. If you have any demands for ECH8315-TL-H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ECH8315-TL-H Atribi pwodwi yo

Nimewo Pati : ECH8315-TL-H
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 30V 7.5A ECH8
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 875pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.5W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-ECH
Pake / Ka : 8-SMD, Flat Lead

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