[2669PC Stock]
- Nimewo Pati:
- IRF7171MTRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 15A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7171MTRPBF electronic components. IRF7171MTRPBF can be shipped within 24 hours after order. If you have any demands for IRF7171MTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7171MTRPBF Atribi pwodwi yo
Nimewo Pati :
IRF7171MTRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 15A
Seri :
FASTIRFET™, HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A (Ta), 93A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.5 mOhm @ 56A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2160pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ MN
Pake / Ka :
DirectFET™ Isometric MN
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