STMicroelectronics - STD4N62K3

KEY Part #: K6419397

STD4N62K3 Pricing (USD) [109477PC Stock]

  • 1 pcs$0.33786
  • 2,500 pcs$0.29953

Nimewo Pati:
STD4N62K3
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 620V 3.8A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in STMicroelectronics STD4N62K3 electronic components. STD4N62K3 can be shipped within 24 hours after order. If you have any demands for STD4N62K3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STD4N62K3 Atribi pwodwi yo

Nimewo Pati : STD4N62K3
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 620V 3.8A DPAK
Seri : SuperMESH3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 620V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.95 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 450pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 70W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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