HTMN5130SSD-13 Pricing (USD) [92797PC Stock]
- 1 pcs$0.42136
- 2,500 pcs$0.37135
- Nimewo Pati:
- HTMN5130SSD-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 55V 2.6A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Diodes - RF, Tiristors - SCR - Modil yo, Tiristors - SCR and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated HTMN5130SSD-13 electronic components. HTMN5130SSD-13 can be shipped within 24 hours after order. If you have any demands for HTMN5130SSD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTMN5130SSD-13 Atribi pwodwi yo
Nimewo Pati :
HTMN5130SSD-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 55V 2.6A 8SOIC
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.6A
RD sou (Max) @ Id, Vgs :
130 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
218.7pF @ 25V
Pouvwa - Max :
1.7W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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