[13850PC Stock]
- Nimewo Pati:
- FDB6021P
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 28A TO-263AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDB6021P electronic components. FDB6021P can be shipped within 24 hours after order. If you have any demands for FDB6021P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB6021P Atribi pwodwi yo
Nimewo Pati :
FDB6021P
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 28A TO-263AB
Seri :
PowerTrench®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 14A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
28nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
1890pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
37W (Tc)
Operating Tanperati :
-65°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263AB
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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